N-mosfet DMG4800LK3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id): @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8,7nC @ 5V
Vgs (Max): ±25V
VGS(th) Gate Threshold Voltage 0.8 - 1.6 V
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
FET Feature
Power Dissipation (Max): 1.71W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252-3